Author : D.William

In a groundbreaking advancement for three-dimensional (3D) integrated circuit technology, a research team has unveiled an innovative fabrication process that seamlessly integrates pure ruthenium-based nano...

image:  (a) Integration schematic of an n-TSV in BSPDN architecture; (b) high-AR n-TSV array configuration; (c) calculated thermal stress mappings in n-TSVs with (i) vertical...